Electronic Properties and Structure of Aperiodic Materials

Abstract

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes: epitaxial growth of ultra-thin and high-resistivity films, study of the relationship between device performance and material parameters using IMPATT and LSA Gunn diodes, growth of semi-insulating substrates and characterization techniques, and study of ion implantation as a tool for microwave device fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1974
Accession Number
ADA003980

Entities

People

  • E. A. Stern

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Faraday Effect
  • Kerr Effects
  • Kerr Magneto-Optic Effect
  • Materials
  • Materials Laboratories
  • Materials Science
  • Optical Properties
  • Phase
  • Research Facilities
  • Scientific Research
  • Semiconductors
  • Shielding
  • Solid State Physics
  • Teamwork
  • Universities
  • X Rays

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Optical Physics and Photonics.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene