Thin Film Optical Waveguides in III-V Semiconductors
Abstract
The development of techniques for the growth of vapor phase epitaxial GaAs/GaAsP waveguide structures, and GaAs/GaAlAs structures in which the GaAs layer is grown by vapor phase epitaxy on a GaAlAs liquid phase epitaxial substrate are described. Large area GaAs/GaAsP structures with good surface quality have been achieved, but wafer bow problems due to lattice mismatch have prevented the accurate measurement of attenuation rates. Two dimensional waveguides have been fabricated which have attenuation rates comparable to one dimensional waveguides. This result suggests that it should be possible to fabricate a two dimensional electro-optic modulator with a relatively low drive power.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1974
- Accession Number
- ADA004143
Entities
People
- M. G. Craford
Organizations
- Monsanto