Radiation Effect on GaAs Interface,
Abstract
The C-V and Q-V technique was applied to the study of interface charge distributions of GaAs epitaxial layers grown on semi-insulating substrates. Changes of mobility and free carrier concentration in the epitaxial layer and extending through the interface into the substrate were determined before and after exposure to a neutrons fluence of 1.6 x 10 to the 15th power n/sq cm and a total dose of ionizing radiation of 10 to the 8th power rad (gaAs). Changes at the interface and in the expitaxial layer are correlated with the voltage-current characteristic variations of the GaAs junction field-effect transistors. Effects of neutron irradiation on the transient response to ionizing radiation of discrete junction field-effect transistors was assessed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1974
- Accession Number
- ADA004151
Entities
People
- Kurt Lehovec
- Rainer Zuleeg