Analysis of Performance of IR Detectors under Radiation Environments

Abstract

A mathematical computer model has been developed for the transient response of silicon photoconductive IR detectors at low temperatures. Predicted responses are compared to measured time histories resulting from short-pulse Linac excitations. The model is used to predict the response of the detector to single gamma events and to explain the memory effect of a moving IR spot. Future work will use the model to investigate the spontaneous spiking noise of biased photoconductive detectors and the response of photovoltaic detectors. Experimental spiking and photovoltaic detector data are presented for use in these analyses.

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Document Details

Document Type
Technical Report
Publication Date
Jul 24, 1974
Accession Number
ADA004156

Entities

People

  • Barry A. Green
  • Robert A. Berger
  • Rodolfo A. Cesena
  • Roland E. Leadon

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Conduction Bands
  • Detectors
  • Electric Fields
  • Electrons
  • Excitation
  • Fermi Levels
  • Impedance
  • Infrared Detectors
  • Lasers
  • Light Sources
  • Materials
  • Measurement
  • Photoconductive Detectors
  • Radiation
  • Resistance
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Image Processing and Computer Vision.
  • Pulsed Power and Plasma Physics.