Variable Band Gap Emitters and Detectors.
Abstract
The objective of the present work has been the growth and characterization of zero band gap semiconductors. Significant advances were made in the controlled and reproducible growth of low carrier concentration films of IV-VI compounds and their alloys. A hot wall method, characterized by near equilibrium conditions, was employed for the growth of PbS, PbSe, SnTe and Pb1-xSnxSe. The theoretical studies involved first-principles calculation of the electronic structure of Pb(1-x)Sn(x)Te, detailed studies of the constant energy surfaces of the IV-VI compounds, and the investigation of the effect of isotropic and uniaxial strains on the (110) subsidiary extrema in the conduction and valence bands of these materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1974
- Accession Number
- ADA004661
Entities
People
- Harvey L. Garner
- Jay N. Zemel
Organizations
- Moore School of Electrical Engineering