Injection Luminescent Studies in Cadmium Sulfide (CdS) Junction Devices.
Abstract
The role of implanted Bi in type conversion of CdS has been explored and clarified. Unimplanted, n-type, vapor phase grown CdS platelets were studied in a search for substrates with electrical and optical properties suitable for efficient LED's; growth of these substrates has been achieved, but controlled, high yield has not been attained. Radiation damage incurred by heavy ion implants of CdS was studied; new methods for measuring the density of non-radiative recombination centers were found and applied to CdS, but methods of post-treatment to remove these centers were not found. Methods of improving efficiency through increasing the thickness of the implanted p layer were studied. Range measurements indicate that the p layer thickness can be doubled by employing channeling. A new range theory based on combined single and multistream diffusion was developed to explain the profile data. These range studies also led to a new technique for measuring stopping power of probe ions used in Rutherford backscattering.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1974
- Accession Number
- ADA004828
Entities
People
- F. Chernow
Organizations
- University of Colorado Boulder