SEM Evaluation of Metallization on Semi-conductors,
Abstract
A test method for the evaluation of metallization on semiconductors is presented and discussed. It is applicable to discrete devices and to integrated circuits, and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1974
- Accession Number
- ADA004835
Entities
People
- Donald L. Fresh
- John W. Adolphsen
Organizations
- The Aerospace Corporation