Electron Beam Semiconductor RF Amplifier with Planar Diodes.
Abstract
The objective of the program was Research and Development on Electron Bombarded Semiconductor RF amplifiers with planar diodes for the purpose of establishing uniformity of the EBS device, determining the thermal impedance of the target diodes, constructing devices for life test and examining them after the completion of the life test. The EBS amplifier consists of an electron gun, a meander-line deflection structure and a target all mounted within a vacuum wall.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1974
- Accession Number
- ADA005276
Entities
People
- James A. Long
Organizations
- Watkins-Johnson Company