Design Optimization of Metal-Insulator-Semiconductor Devices for Infrared Solid State Imaging.
Abstract
The study provides a methodology for design optimization of metal-insulator-semiconductor device used as charge storage infrared detectors. A new general formulation for the calculation of efficient charge storage capacity is derived and compared to existing formulas. Design parameter constraints are examined and several performance improvement techniques are discussed. A new device structure is proposed which integrates many desirable features into a single element. The results of this study indicate that the trend should be toward charge injection devices constructed of p-type group IV-VI thin film semiconductors with high dielectric constant insulators using back-illumination through anti-reflection layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1974
- Accession Number
- ADA005472
Entities
People
- Numa Augustine Boudreaux Iii
Organizations
- Naval Postgraduate School