Advanced Technology for Micropower Integrated Circuits.

Abstract

A new 'V-groove' process for the fabrication of bipolar integrated circuits was developed. The process requires carefully controlled deposition of epitaxial layers and anisotropic etching of silicon. The resulting structure eliminates the need for the conventional buried layer, isolation diffusion and masking for base diffusion. A four-mask process is used to make NPN transistors, resistors and Schottky diodes. A five-mask process can provide improved lateral PNP transistors. The second area of the activity was the development of vapor-phase arsenic doped polycrystalline silicon resistors of high value. These resistors result in reproducibly high resistance, low parasitic capacitance and elimination of the need for isolation.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA005629

Entities

People

  • J. D. Meindl
  • T. J. Rodgers

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Diffusion
  • Integrated Circuits
  • Micropower Circuits
  • Npn Transistors
  • Pnp Transistors
  • Resistance
  • Resistors
  • Schottky Diodes
  • Transistors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology