Narrow Gap Semiconductors - PhSnTe and PbSnSe.

Abstract

The following studies were carried out: Feasibility study of using MIS (metal-insulator-semiconductor) structures of 4-6 semiconductors as infrared charge coupled imagers; Study of the refractive index of PbSnTe; Studies of photoelectric effects in 4-6 alloy semiconductors; Study of the effects of proton bombardments and the isochronal annealings on PbTe and PbSnTe.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1974
Accession Number
ADA005702

Entities

People

  • Tien F. Tao

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Dielectrics
  • Electronics
  • Feasibility Studies
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Narrow Band Gap Semiconductors
  • Photoelectric Effect
  • Proton Bombardment
  • Refractive Index
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene