Luminescence and Hall Effect of Ion Implanted Layers in ZnO.
Abstract
An experimental investigation was conducted on implanted layers of Li, Na, N, P, and Ne in ZnO substrates. The primary experimental method used was cathodoluminescence, and it was found that it was possible to probe an implanted layer by varying the beam voltage of the exciting electrons. The electrical properties of the implanted layers were obtained using the van der Pauw technique, and a photoluminescence system incorporating a Nitrogen laser was used to perform time-resolved spectroscopy. Optical evidence of a shallow acceptor center in ZnO was revealed for the first time in the cathodoluminescent spectra obtained from implanted samples of ZnO; however, no evidence of type conversion and pn-junction formation was found in the electrical measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1974
- Accession Number
- ADA005899
Entities
People
- Bruce J. Pierce
Organizations
- Air Force Institute of Technology