Admixtures in Germanium, Silicon and Gallium Arsenide (Recombination Characteristics),
Abstract
This article reports on the recombining characteristics of admixtures in germanium, silicon and gallium arsenide. The nature and characteristics of energy levels (donor or acceptor, ionization, etc.) depend on the electron structure of admixture atoms and atom lattices and also on their position in the crystalline lattice of the semiconductor. The relationship of the dimensions of admixture atoms and the lattice is also important. The possibility of creating covalent bonds with atoms of the main lattice is of basic importance. Results of research in this area are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 14, 1974
- Accession Number
- ADA006097
Entities
People
- K. D. Glinchuk
Organizations
- United States Army Foreign Science and Technology Center