Characterization of Silicon Carbide.

Abstract

The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1974
Accession Number
ADA006409

Entities

People

  • J. W. Faust Jr.
  • R. B. Hilborn Jr

Organizations

  • University of South Carolina

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Compound Semiconductors
  • Conductivity
  • Electrical Measurement
  • Energy Levels
  • Measurement
  • Mobility
  • Silicon
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology