Investigation of Ion Implantation as a Doping Technique for the III-V Semiconductors and Ternary Alloy Systems.
Abstract
The inadequacy of SiO2 as a protective coating on GaAs for n-type implanted dopants was established. An investigation of alternative passivating layers was undertaken. Si3N4 was demonstrated to be effective as a protective coating and, when used in conjunction with elevated substrate temperatures during implantation, yielded n-type GaAs with a high doping efficiency for the implanted ions. Photoluminescence studies of Si-implanted GaAs indicated the existence of new species, presumably complexes between Si and damage induced point defects. Photoluminescence studies of Zn-implanted GaN demonstrated that ion damage is responsible for decreasing luminescence efficiency with increasing Zn dose for room temperature implantations and that higher efficiencies can be obtained by implantations at 300C. Preliminary results of ion implantation into AlN are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 14, 1975
- Accession Number
- ADA006465
Entities
People
- Billy L. Crowder
Organizations
- IBM Thomas J. Watson Research Center