Ion Implantation of Diatomic Sulfur Into GaAs.
Abstract
Reproducibility of S implantation in GaAs has been a controversial subject for some time. In this project S(2+) was obtained from elemental sulfur ionized by both Ar and CO2 plasmas. The Ar carrier produced an unstable 2.8 microamp beam of 90 keV S(2+) ions, whereas the CO2 carrier produced a very stable 6 - 8 microamp beam of 90 and 141 keV S(2+). That both sources produced S(2+) with no oxygen content, was proven by differential Auger analysis of the GaAs targets. The high conductivity (12.74 ohm-cm) of the as-implanted samples changed to that of the substrate (10 to the 10th power ohm-cm) after the anneal. Temperature dependence of resistivity of the as-implanted samples was determined and two activation energies were calculated from these data. The necessary modifications of the available equipment and the design of new subsystems was accomplished in this project, including the substrate heater controller and pyrolytic reactor.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1974
- Accession Number
- ADA006801
Entities
People
- Robert P. Lyons
Organizations
- Air Force Institute of Technology