Thin-Film-Transistor Stability Investigation.

Abstract

This program was undertaken to identify the key parameters required for stable operation of thin-film transistors (TFTs), to define the range of stable operation, and to assess TFT-device reliability and yield. Lead sulfide (PbS) and lead selenide semiconductors were found to produce stable TFFs (i.e., free from ionic-drift and carrier-trapping effects) in combination with aluminum oxide (Al2O3) as the gate dielectric, but lead telluride devices exhibited carrier trapping. Stable TFT operation was obtained with chromium, molybdenum, or tungsten source/drain electrodes, while aluminum, titanium, lead, and gold electrodes were not as satisfactory. Unsatisfactory devices were obtained with silicon dioxide as the gate insulator. Stable PbS TFT operation was demonstrated over the range from -196 to +125C.

Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1975
Accession Number
ADA006934

Entities

People

  • Gordon Kramer

Organizations

  • Aerojet Rocketdyne Holdings

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Oxides
  • Electrodes
  • Films
  • Lead Tellurides
  • Metal Oxide Semiconductors
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Silicon Dioxide
  • Tellurides
  • Thin Film Transistors
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Irregular Warfare and Special Operations Cyberspace Operations against Adversarial Threats.
  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene