Noise in Microwave Semiconductor Oscillators and Amplifiers. Part II. Noise Properties of IMPATT Devices.
Abstract
The purpose of this study is to investigate the noise properties of IMPATT diodes as a function of device structure, material parameters and operating conditions; to determine the optimum noise performance which is achievable for IMPATT diodes when they are used as oscillators and amplifiers; to obtain an improved physical understanding of noise and its relationship to other important nonlinear properties such as the dc-to RF conversion efficiency and RF power generation of IMPATT devices; and to derive important design and operating criteria regarding noise, efficiency and power for oscillator and amplifier applications using IMPATT diodes. In order to achieve these goals, a comprehensive study of the noise properties of IMPATT diodes has been carried out.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1974
- Accession Number
- ADA007158
Entities
People
- Chente Chao
- George I. Haddad
Organizations
- University of Michigan