Complementary MOS Transistors in Micropower Circuits.

Abstract

Complementary MOS transistor (CMOST) circuits offer great potential for very low power operation. These circuits are analyzed to determine their ultimate obtainable performance, and fabrication techniques are developed that produce circuits with the lowest power-speed product reported to date. The MOST is treated as a distributed nonlinear transmission line to investigate the detailed nature of its transient response. These methods are applied to the analysis of the switching performance of CMOST logic gates. This analysis predicts that power consumption has no lower bound if the gate can be operated at low voltages and if the transistors are small enough. A new MOST model is developed that describes effects that become significant at small voltages and sizes. A method for adjusting MOST threshold voltage by ion implantation is described.

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1974
Accession Number
ADA007272

Entities

People

  • Richard Marker Swanson

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Circuits
  • Energy Consumption
  • Implantation
  • Ion Implantation
  • Logic Gates
  • Low Voltage
  • Micropower Circuits
  • Nonlinear Transmission Lines
  • Transistors
  • Transmission Lines
  • Voltage

Fields of Study

  • Engineering

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.