Electron Microscopic Observations of Microcracking about Indentations in Aluminum Oxide and Silicon Carbide.

Abstract

Transmission electron microscopy was used to examine the nature of microcracking about small-scale indentations in two highly brittle solids, sapphire and carborundum. The observed crack geometry is discussed in terms of an earlier model of indentation fracture beneath a point force, in which both loading and unloading half-cycles contribute to the crack growth. The residual interfaces are characterized mainly by moire patterns, sometimes by dislocation networks. These observations are discussed in relation to spontaneous closure and healing mechanisms, and the 'lattice mismatch' necessary for their production estimated at about one part in a thousand. It is shown that cleavage steps comprise the main source of obstruction to lattice restoration across the interfaces. Mechanical and thermal treatments of the indented surfaces are found to influence the extent of the residual cracking. Some practical implications of the observations are discussed.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA007445

Entities

People

  • B. J. Hockey
  • B. R. Lawn

Organizations

  • National Institute of Standards and Technology

Tags

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Compound Semiconductors
  • Cracks
  • Electron Microscopy
  • Electrons
  • Microcracking
  • Microscopy
  • Observation
  • Residuals
  • Silicon Carbide
  • Transmission Electron Microscopy

Readers

  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Microelectronics