Investigations of Secondary Ion Mass Spectrometry.
Abstract
Research has been conducted on extending the utility of SIMS (Secondary Ion Mass Spectrometry), analysis for oxide coatings on silicon. The effects of surface charging is mainly alleviated by combination of ion beam rastering and increased the energy filter range for the secondary ions. In ion implanted oxides the energy distribution of sputtered ions is broadened and shifted toward higher energies. A technique was developed for cooling specimens to -180C. At this temperature the mobility of Na ion in SiO2 is effectively reduced to allow measurement of depth profiles of Na in both as-grown oxide and in ion implanted oxide coatings. It was also demonstrated that Na(+) ion micrographs can be taken of specimens at -180 C to show lateral distribution of the Na through the oxide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1975
- Accession Number
- ADA007619
Entities
People
- A. E. Austin
- B. F. Phillips
Organizations
- Battelle Memorial Institute