Application Manual for 200-Ampere Gate Turnoff Thyristor (GTO) or Gate Controlled Switch (GCS).

Abstract

The objectives of the Phase I activity were to design, fabricate, and evaluate a gate turnoff thyristor (GTO) with 75-ampere rms minimum rating capable of interrupting a forward current of at least 200 amperes and a braking capability of 1000 volts. The secondary objective was simultaneous reduction of forward drop from 3 to 2 volts. The objectives of Phase II in general have been to further evaluate the GTO device and to provide a technical manual containing data covering theoretical details of device construction and characterization, methods of application, circuit examples for application, and projections covering manufacturing, reliability, and growth.

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1974
Accession Number
ADA008004

Entities

People

  • B. W. Merchant
  • F. B. Golden
  • H. Ruhl
  • P. Shafer
  • R. N. Bushman

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Construction
  • Cooperation
  • Coverings
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Manufacturing
  • Reliability
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Thyristors

Readers

  • Semiconductor Device Technology
  • Space Exploration and Orbital Mechanics.
  • Systems Analysis and Design