Surface Passivation Studies on PbSnTe Diode Infrared Detectors.
Abstract
The development of diffused junction PbSnTe has resulted in high performance, high impedance detectors in the 8- to 14-micrometer region. However, this accomplishment is restricted by the lack of uniformity of resistance from element to element for detector arrays. The objectives of this program were to identify the leakage mechanism responsible for low resistance, minimize its effect on detector array performance, and passivate the surface of the device.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1974
- Accession Number
- ADA008025
Entities
People
- David W. Bellavance
- Joseph S. Wrobel
- Richard L. Guldi
- S. G. Parker
Organizations
- Texas Instruments