Long Term Memory in Junction Devices Using Multivalent Trapping Impurities in Silicon.

Abstract

Various multivalent dopants were investigated with the goal of obtaining non-volatile multilevel memory devices in silicon using the Field Induced Trapping (FIT) effect. The test structures included P-N junctions, Schottky diodes, and resistive bars fabricated in silicon substrates suitably doped with multivalent dopants. Novel device effects were observed and are described. Suitability of various dopants was determined.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA008045

Entities

People

  • J. W. Holm-kennedy

Organizations

  • University of California, Los Angeles

Tags

DTIC Thesaurus Topics

  • Diodes
  • Electronic Equipment
  • Electronics
  • Impurities
  • Memory Devices
  • P-N Junctions
  • Schottky Diodes
  • Semiconductor Devices
  • Solid State Electronics
  • Substrates

Fields of Study

  • Materials science

Readers

  • Mathematical Modeling and Probability Theory.
  • Plasma Physics.
  • Solar Photovoltaics and Thermoelectric Devices.