Thermal Neutron Radiation Effects in II-VI Compounds.

Abstract

In this project, the double acceptor center in neutron irradiated CdTe was studied. The variation of resistivity as a function of time was measured. The analysis of our experimental results suggests that (a) the double acceptor center includes Te-vacancy, (b) the height of the barrier is about 0.25 eV, (c) the effective range of the potential barrier is about 200A, and (d) the activation energy of motion of interstitial cadmium is estimated to be 0.74 eV. It is known that CdTe is an important compound semiconductor for solid state devices, and the authors' interests stem from the fact that it shows promise as a material for the detection of nuclear radiation.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1974
Accession Number
ADA008177

Entities

People

  • Chao-yang Huang
  • Chihiro Kikuchi

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Heat Of Activation
  • Materials
  • Neutrons
  • Nuclear Radiation
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Silicon Carbide
  • Thermal Neutrons

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics