Experiments on the Origin of Process Induced Recombination Centers in Silicon.
Abstract
Densities of recombination centers obtained by the transient capacitance technique in diffused p+n junctions and Al-nSi Schottky barriers are correlated with process variables of more than 70 diffusion and heat treatment experiments. Results show that the two process induced donor defect centers reported previously are generated at the strained and disordered silicon surface layers either from high surface concentration phosphorus or boron diffusion or from mechanical lapping. The effects of phosphorus and boron surface concentrations, phosphosilicate surface glass layers and diffusion temperatures on the concentrations of these two centers are investigated. Nearly constant defect concentration profiles at depths more than 50 micrometers from the surfaces are observed, suggesting an L-shaped defect concentration profile in samples with one-sided surface defect source and U-shaped profile for two-sided surface defect sources. These characteristics suggest that the defect centers are vacancies or vacancy complexes formed by vacancies diffused into silicon from the surface sources.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1974
- Accession Number
- ADA008506
Entities
People
- C. T. Sah
- C. T. Wang
Organizations
- University of Illinois Urbana–Champaign