Calculation of Exciton Energy Levels in GaAs and InP.
Abstract
A theoretical study of 1s, 2s, and 2p exciton energy levels in GaAs and InP was conducted using degenerate perturbation theory. Analytical expressions for the spin-orbit energy corrections for the 1s, 2s and 2p states are given. Also listed are expressions for the dependence of the 1s-state energy corrections as a function of an external magnetic field (up to 40 kiloGauss). Comparison of theory with a small number of data points indicates good correlation of theory to data up to approximately 30 kiloGauss.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1975
- Accession Number
- ADA008656
Entities
People
- Daniel G. Kniola
Organizations
- Air Force Institute of Technology