Laser Light Scattering from Electrons and Phonons in Wide Bandgap Semiconductors.
Abstract
The aim of this study was the detection and characterization of impurity states in II-VI and I-III-VI2 semiconductors. Three techniques were employed to this end: (1) EPR at various temperatures; (2) local mode vibrational Raman spectroscopy; (3) spin-flip laser scattering at very high fields (= or > 150 kG). These studies of impurity states facilitate the development of quality control standards for two important classes of semiconductors. Substitutional impurities play a key role in the operation of p-n junction devices in these materials. It was felt that the detection of impurity states with very high g-values (of order ten) might lead to spin-flip lasers operative in the near IR with large tuning ranges. In fact, impurities with g approximately equal to 8 have been found in both CuAlS2 and CuGaS2 in the present study.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1975
- Accession Number
- ADA008797
Entities
People
- J. F. Scott
Organizations
- University of Colorado Boulder