Reliability of Interconnections on Microcircuits.
Abstract
Defects in metal interconnection patterns constitute a significant factor in the reliability of semiconductor microcircuits. Electrical opens, occurring in the vacuum-deposited metal films, have achieved considerable notoriety and have been the basis for reliability studies by numerous investigators. The application of the scanning electron microscope (SEM) is becoming relatively widespread in detecting these defects in metallization. Considerable work has recently been directed toward improving the SEM procedures and techniques, including the preparation of a test method in MIL-STD format. The current status of the SEM test method; its utility, suitability, and acceptance in detecting defects in metal interconnection patterns; and its extension and applicability to other types of defects in high reliability semiconductor microcircuits are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 16, 1974
- Accession Number
- ADA008800
Entities
People
- D. L. Fresh
Organizations
- The Aerospace Corporation