A Model for the Discharge of Radiation-Induced Space Charge in MOSFET's.

Abstract

Rapid annealing of the positive space charge in irradiated Si-SiO2 metal systems is due to Quantum mechanical tunneling of electrons from the valance band to the trapped hole. The annealing factor increases and the total effect is reduced at all times by lower temperature processing or any technique which concentrates the traps near the interfaces.

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1975
Accession Number
ADA008855

Entities

People

  • R. J. Maier

Organizations

  • Air Force Research Laboratory

Tags

DTIC Thesaurus Topics

  • Annealing
  • Corpuscular Radiation
  • Electromagnetic Radiation
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Fermions
  • Ionizing Radiation
  • Nuclear Radiation
  • Quantum Tunneling
  • Radiation
  • Space Charge
  • Subatomic Particles
  • Tunneling

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space
  • Space - Hall-Effect Thruster