Properties of Avalanche Transit-Time Devices. Volume 1.

Abstract

The objectives of this study are two-fold. One is to develop a very general large-scale computer simulation model for semiconductor devices. The other is to simulate various Si avalanche diode structures operating in the IMPATT and TRAPATT modes at different operating conditions in order to investigate the effects of various parameters on the performance of these avalanche diodes.

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1975
Accession Number
ADA009041

Entities

People

  • C. M. Lee

Organizations

  • University of Michigan

Tags

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Compound Semiconductors
  • Computer Simulations
  • Computers
  • Diodes
  • Electronic Equipment
  • Electronics
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Simulations
  • Simulators
  • Solid State Electronics

Readers

  • Distributed Systems and Data Platform Development
  • Electronics Engineering

Technology Areas

  • Microelectronics