Structure of Semiconductor Compounds in the Pseudobinary Systems of PbTe-Bi2Te3, SnTe-Bi2Te3, GeTe-Bi2Te3, SnTe-Sb2Te3,

Abstract

Diffraction class and extinction patterns, as well as unit cell parameters were measured from epigrams on the slip plane and X-ray diffraction photos. Integral intensities of the reflections were determined by diffractometer and processed by digital computer. Unit cell parameters and structure and calculated interatomic distances are presented. GeBi4Te7 parameters differ, mainly in the c parameter, owing to introduction of NaCl structures into the substance.

Document Details

Document Type
Technical Report
Publication Date
May 29, 1974
Accession Number
ADA009345

Entities

People

  • A. I. Zaslavskii
  • T. B. Zhukova

Organizations

  • United States Army Foreign Science and Technology Center

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Computers
  • Diffraction
  • Diffractometers
  • Digital Computers
  • Electronics
  • Extinction
  • Integrals
  • Intensity
  • Reflection
  • Semiconductors
  • Solid State Electronics
  • X Rays
  • X-Ray Diffraction

Readers

  • Computer Vision.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene