Investigation of Electronic Transport, Recombination and Optical Properties in InAs(1-x)P(x) Alloy Systems

Abstract

A systematic study has been carried out on the dependence of the electron mobility and concentration on the epitaxial layer thickness for seven InAs(0.65)P(0.35) epitaxial samples with film thickness varying from 10 micrometers to 4 micrometers. (It was found that an epilayer thickness around 6 micrometers yields the highest electron mobility and lowest electron concentration for this set of samples. A technique has been developed in the Laboratory to examine the atomic composition, the epilayer thickness and the homogeneity of the epilayer using Electron Microprobe Analysis. The optical absorption coefficient as a function of wavelength near the fundamental absorption edge was plotted for 13 epitaxial samples of different alloy compositions. The energy band gap versus alloy composition for these samples was also determined.

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Document Details

Document Type
Technical Report
Publication Date
Dec 15, 1974
Accession Number
ADA009438

Entities

People

  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Band Structures
  • Coatings
  • Electrical Engineering
  • Electron Mobility
  • Energy Bands
  • Engineering
  • Flow Rate
  • Magnetic Fields
  • Measurement
  • Night Vision
  • Optical Absorption
  • Optical Properties
  • Photographs
  • Reflectance
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene