Preparation and Characterization of HgCdSe Alloys.
Abstract
Ingots of Hg(1-x)Cd(x)Se alloys having average x-values of 0.14, 0.18, 0.26, and 0.40 were prepared by reacting the elemental consitituents in evacuated, sealed, quartz tubes. The ingots were recrystallized by traveling-gradient and Bridgman methods to obtain single-crystal regions up to 4 cm in length. Measurements were made on selected specimens, cut from these ingots, of the 4.2 - 300 K electrical resistivity and Hall coefficient, the 1.2 - 4.2 K oscillatory magnetoresistance, and the infrared transmittance. Preliminary analyses were made of the temperature dependence of electron mobility and the composition dependence of the band-gap energy in the Hg(1-x)Cd(x)Se alloys. At 300 K, the optical gap as a function of x is given by the relation E sub g = (-0.06 + 1.50 x) eV, which gives x = 0.44 as the composition required for a 2.05 micrometer detector. Work is continuing on alloy purification and crystal-growth, material parameters, and the spectral photoconductivity of alloys for which 0.35 = or < x = or < 0.48.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1975
- Accession Number
- ADA009484
Entities
People
- Charles R. Whitsett
- Christopher J. Summers
- Donald A. Nelson
- James G. Broerman