Thermoelectric Corrections on the Energy Transport Across Plasma-Solid Interfaces,

Abstract

The amount of plasma energy contained in the free-stream column and stagnation interfaces in direct contact with cooled tungsten electrodes of a direct-current, atmospheric argon arc has been corrected taking into account the thermoelectric effect of a partially ionized plasma. The thermoelectric correction factors to be assessed for the conventional thermal conductivities of fully ionized plasma have been tabulated as a function of the equilibrium temperature of argon at atmospheric pressure. The density diffusion contribution of the thermal conductivity has been calculated. The corrected full-field reduced thermal conductivity has been used for the calculation of the radial temperature profiles corresponding to the axial electron temperatures which were measured by a Thomson scattering experiment. The axial electric field intensity and current density could be determined correctly from the calculated radial temperature profiles and photographic observation of the arc. At the arc-electrode interface the state of plasma is treated by a two-temperature gas model. Comprehensive formula useful for the calculations of both the anode and cathode fall energy transfer modes are presented.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1974
Accession Number
ADA009626

Entities

People

  • M. Niimura
  • P. W. Chan
  • R. J. Churchill

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Barometric Pressure
  • Conductivity
  • Current Density
  • Direct Current
  • Electric Fields
  • Electrodes
  • Electromagnetic Scattering
  • Energy
  • Energy Transfer
  • Free Stream
  • Heat Transfer
  • Scattering
  • Thermal Conductivity
  • Thermoelectricity
  • Thomson Scattering

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Plasma Physics / Magnetohydrodynamics
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics