Scanning Electron Microscope Irradiation of MOS Capacitors.
Abstract
The objective of this program was to characterize radiation effects induced in electronics when exposed to an electron beam from a scanning electron microscope (SEM). An MOS capacitor was chosen as the test object, because radiation effects on MOS capacitors are well known. The effects of radiation on the capacitors were characterized by the variation in the capacitance-voltage characteristic with radiation dose. It was found that the change in flat-band voltage shift for a given radiation dose is similar for both SEM radiation and Co60 radiation. A technique was developed for annealing out radiation-induced damage in MOS capacitors by irradiating at negative gate bias, and then heating the capacitors at an elevated temperature. This process permits the same device to be calibrated and used as a radiation monitor or to be used as a test device for radiation studies. Several interesting applications of the SEM became apparent. One of these is the capability to study lateral nonuniformities in electronic circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1974
- Accession Number
- ADA009655
Entities
People
- D. A. Mcpherson
- M. F. Millea
Organizations
- The Aerospace Corporation