New Passivation Methods for GaAs

Abstract

The fabrication of high-quality oxides on GaAs with good electrical interface properties was investigated. The best results were obtained with a new anodization scheme based on an aqueous solution of tartaric or citric acid with glycol, and a subsequent annealing at 250C. In view of increased corrosion resistance of the resulting oxides if some amount of Al is included, and in view of an optimization of interface lattice matching, semi-insulating GaAlAs was grown by sliding-boat liquid-phase epitaxy prior to anodization. A new method of depositing pure Al2O3 by slow evaporation of Al through an O2 atmosphere of 0.0005 torr also gave encourgaging results which could be understood by the fact that this method is akin to that of molecular-beam epitaxy. The best electrical interface properties obtained make the results useful for optical devices and for MOS device applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA009780

Entities

People

  • H. Hasegawa
  • H. L. Hartnagel
  • K. E. Forward
  • R. Sign

Organizations

  • Newcastle University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anodizing
  • Charge Coupled Devices
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dielectric Properties
  • Electrical Engineering
  • Electrical Properties
  • Electronics Laboratories
  • Energy Bands
  • Liquids
  • Materials
  • Measurement
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene