Ceramic Sintering.

Abstract

Microstructure development during the sintering of densifying and non-densifying powders of beta-SiC was observed. The kinetics of grain growth and porosity decrease in the densifying powders, as well as the microstructure development, were found to be very similar to those observed in oxide powders. It was found that the resistivity of B containing, dense sintered beta-SiC could be changed through compensation of the B acceptors by N donors introduced from the sintering furnace atmosphere during firing. The thermal EMF of a junction made of p and n types of dense, sintered beta-SiC was measured over the temperature range from 100C to 1500C.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1975
Accession Number
ADA009867

Entities

People

  • Charles D. Greskovich
  • Joseph H. Rosolowski

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Ceramic Materials
  • Conductivity
  • Crystals
  • Dihedral Angle
  • Electrical Properties
  • Energy
  • Grain Growth
  • Grain Size
  • High Energy
  • Hot Pressing
  • Materials
  • Measurement
  • Physical Chemistry
  • Silicon Carbide
  • Single Crystals
  • Sintering Furnaces

Fields of Study

  • Materials science

Readers

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