Analysis of Semiconductor Structures by Nuclear and Electrical Techniques: Silicide Formation.

Abstract

The report presents three studies of silicide formation in systems composed of single crystal silicon overlaid with a metal film. Common to all this work is the use of MeV He ion backscattering and glancing angle x-ray diffraction as the principal analytical tools. Backscattering data gives composition as a function of depth and hence can be used to determine growth kinetics while x-ray diffraction gives identification of phases and structural information. Work is reported in the following areas: Implanted noble gas atoms as diffusion markers in silicide formation; Structure and growth kinetics of Ni2Si on silicon; Iron silicide thin film formation at low temperatures.

Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1975
Accession Number
ADA010041

Entities

People

  • James W. Mayer
  • Marc-a. Nicolet
  • Sylvanus S. Lau
  • Wei-kan Chu

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Backscattering
  • Diffraction
  • Films
  • Kinetics
  • Low Temperature
  • Metal Films
  • Noble Gases
  • Semiconductors
  • Single Crystals
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene