Evaluation of Gallium Nitride for Active Microwave Devices.

Abstract

The high 5 x 10 to the 18th power per cc electron density in as-grown GaN is shown to be due to native donors. Precipitation at grain boundaries and in the bulk does not influence these donors but limits the electric fields that can be applied. Compensation with Li can lower the carrier density, but at the expense of breakdown field. Crystal growth by CVD using NH3, although yielding single crystals as large as 1 x 2 x 1 cm, inherently leads to these low resistivities. Annealing (or crystal growth) under equilibrium (very high) N2 pressures is indicated.

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1974
Accession Number
ADA010215

Entities

People

  • Murray Gershenzon

Organizations

  • University of Southern California

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electric Fields
  • Electron Density
  • Electrons
  • Gallium Nitrides
  • Grain Boundaries
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics