Heterojunction Contacts for Transferred-Electron Devices.
Abstract
The aim of the research described in this annual report is the development of heterojunction contacts for transferred-electron devices for high millimeter frequencies. The details of a liquid phase epitaxial growing system are described and results of the growth of InP and In(x)Ga(1-x)As epitaxial layers on InP substrates are given. There is a brief discussion of a computer simulation program that has been developed and the research program plans for the next year.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1975
- Accession Number
- ADA010216
Entities
People
- Russell E. Hayes
Organizations
- University of Colorado Boulder