Hardened Hybrid Semiconductor Packages. Task II.
Abstract
The work was performed to develop a radiation hardened packaging technique for packaging a whole round semiconductor wafer. The metal which connected the wafer bonding pads to the package output pins was aluminum which was vapor deposited through a mask on the inside surface of the package. One end of each conductor line was lifted off the package surface to form a beam lead. These beam leads were then ultrasonically bonded to the wafer bonding pads.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1975
- Accession Number
- ADA010782
Entities
People
- Frank A. Lindberg