Semiconductor Measurement Technology: Quarterly Report July 1 to September 30, 1974

Abstract

This quarterly progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period include (1) completion of Hall effect measurements to determine activation energies of the gold donor and acceptor levels in silicon; (2) successful direct measurement of fast interface state density with the circular CCD test structure; and (3) demonstration of the feasibility of the use of acoustic emission as a non-destructive means for testing individual beam-lead bonds.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1975
Accession Number
ADA011121

Entities

People

  • W. M. Bullis

Organizations

  • National Institute of Standards and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Synthesis
  • Chemistry
  • Electron Density
  • Electron Emission
  • Electronics Industry
  • Electronics Laboratories
  • Mass Spectrometry
  • Materials Science
  • Measurement
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Spectrometry
  • Test And Evaluation

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems