The Electrical and Metallurgical Properties of Defects in Compound Semiconductors.
Abstract
The program was directed toward the following five separate projects related to the electrical, optical, and metallurgical properties of defects in compound semiconductors: (1) Properties of gallium phosphide green electroluminescent diodes; (2) Effects of gamma radiation on gallium arsenide crystals and gunn diodes; (3) Liquid epitaxy and physical properties of Al(x)Ga(1-x)As; (4) Lattice defects in annealed gallium arsenide single crystals; (5) Electrical, optical, and metallurgical properties of defects in Al(x)Ga(1-x)As.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1975
- Accession Number
- ADA011282
Entities
People
- Gerald L. Pearson
Organizations
- Stanford University