1.06 Micrometer High Sensitivity IR Photocathode.
Abstract
The design and progress towards a field-assisted double heterojunction photocathode with high quantum efficiency at 1.06 micrometers is reported. The basic device design was developed and the concept feasibility was demonstrated in a preceeding program. In this program the authors have further improved the design and achieved uniform and reproducible performance from the test devices. Internal electron transport efficiencies approaching 70 percent have been measured. However, the external quantum efficiency at 1.06 micrometers is low due to an unfavorable bandgap grading in the GaAsSb absorber layer. Further work to optimize the device design is recommended to realize the great potential of this double heterojunction structure for field-assisted photoemission.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1975
- Accession Number
- ADA011694
Entities
People
- J. S. Harris Jr.
- R. Sahai