Investigations of Technical Problems in Gallium Arsenide

Abstract

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes: epitaxial growth of ultra-thin and high-resistivity films, study of the relationship between device performance and material parameters using IMPATT diodes, annealing study of n-n(+) interfaces to improve their electrical properties, growth of semi-insulating substrates and characterization techniques, and study of ion implantation as a tool for microwave device fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Feb 05, 1975
Accession Number
ADA011708

Entities

People

  • Bryant M. Welch
  • Cheng P. Wen
  • Fred H. Eisen
  • Ricardo R. Zucca

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Avalanche Diodes
  • Diodes
  • Electronic Components
  • Epitaxial Growth
  • Field Effect Transistors
  • Impatt Diodes
  • Ion Implantation
  • Laser Diodes
  • Materials
  • Measurement
  • Scattering
  • Semiconductors
  • Silica Glass
  • Spectra
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene