Crystal Properties as Influenced by Crystallographic Imperfections. High-Energy Ion Implantation.
Abstract
The report consists of two parts. Part 1 reports ion implantation studies on single crystal silicon. Post bombardment and post annealing properties of 1 MeV O+ implanted silicon are reported. It is shown that high temperature annealing at 1000C leads to impurity (oxygen) ordering and superlattice formation. The second part summarizes the work done on (Gd3Ga5O12) garnet crystals. First a polishing technique is reported to obtain damage-free surface on garnet wafers. Subsequently, double crystal spectrometry is applied to measure variations in lattice constants in garnet substrates, epitaxial garnet films, and in garnet substrate/film combination after high energy (1 to 3 MeV) proton implantation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1975
- Accession Number
- ADA012554
Entities
People
- Guenter H. Schwuttke
Organizations
- International Business Machines Corporation (Armonk, NY)