Microwave Frequency Memory Using GaAs Transferred-Electron Devices.
Abstract
Transferred-electron devices (TEDs) in microstrip rf circuits have been studied for use in frequency memory applications. The closest frequency spacing obtained for memory states in an experimental system is 22.4 MHz. Twenty states are available between 11.33 GHz and 10.755 GHz. It was shown possible to operate microstrip circuits in parallel to obtain resonances spaced half the spacing for each individual circuit. Electronic tuning of the whole set of frequency states by means of a varactor was demonstrated. The switch-on characteristic of the states was studied, and it is shown that the memorizer's rf output signal is phase-locked to the input signal within 50 ns.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 14, 1975
- Accession Number
- ADA013005
Entities
People
- Walter R. Curtice