Subnanosecond Rise Time Injection Laser Pulses.
Abstract
The hybrid integration of an injection laser with a simple avalanche transistor modulator is shown to produce optical peak powers of several tens-of-watts magnitude and pulse rise times appreciably shorter than 1 nesec. In the central portion of the radiation pattern the pulse leading edge assumes the form of a spike having a displayed rise time of 120 psec. The pulse shape varies as a function of the direction of the radation relative to the plane of the emitting face. The delay between the firing of the avalanche transistor and the emission of the light pulse is less than 2 nsec. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1975
- Accession Number
- ADA013358
Entities
People
- Jonathan Vanderwall
- Walter V. Hattery
- Zoltan G. Sztankay
Organizations
- Harry Diamond Laboratories