III-V Surface Studies.

Abstract

The preferential evaporation of In from (100) Ga(x)In(1-x)As at temperatures 500C, which leads to significant decreases in the In surface concentration, was studied in some detail because of the potential applications of this material (and also of the quaternary GaInAsP). Typical changes in surface composition after heating are from 18% In to about 4% In for one sample, and from 50% In to about 10% In for another sample. The depth of the In-depleted surface is about 6 monolayers. The LEED pattern for the In-depleted surface is unchanged from that of the normal surface, and is the same as for GaAs, indicating that the surface reconstructions are all the same.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1975
Accession Number
ADA013536

Entities

People

  • Bernard Goldstein

Organizations

  • RCA Corporation

Tags

DTIC Thesaurus Topics

  • Critical Temperature
  • Evaporation
  • Films
  • Glass Transition Temperature
  • Isothermal Processes
  • Materials
  • Monomolecular Films
  • Nanomaterials
  • Transition Temperature

Readers

  • Explosive Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.